Blistering of H-implanted GaN

Blistering of H-implanted GaN

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: ~i! ion energy ~from 20 to 150 keV!, ~ii! ion dose ~up to 1.2310 cm!, ~iii! implantation temperature ~from 2196 to 250 °C!, and ~iv! annealing temperature ~up to 900 °C!. Results show that both the onset of blistering ...

Cathodoluminescence depth profiling of ion-implanted GaN

Characterization of Ni-implanted GaN and SiC

High concentrations ( /10 cm ) of Ni were introduced into GaN and SiC by ion implantation at 350 8C. On subsequent annealing at 700 8C, there was more residual lattice damage in GaN compared to SiC. Both materials showed ferromagnetism with transition temperatures below 50 K. No secondary phases could be detected by transmission electron microscopy (TEM) or selected area diffraction in either G...

Annealing behavior of luminescence from erbium-implanted GaN films

We have conducted a systematic study of the bandedge and infrared luminescence properties of Er-implanted GaN thin films. The GaN films, grown by metalorganic chemical vapor deposition, were co-implanted with Er and O ions. After implantation, the implanted samples were furnace annealed at temperatures up to 1100°C. Following annealing, the samples were examined for both bandedge luminescence a...

Characterization of an Mg-implanted GaN p-i-n Diode

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.